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Breakthrough Technology Combines High Performance with Low Losses
Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers a number of attractive characteristics for
high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and
thermal conductivity of silicon carbide allow eveloping devices which by far outperform the corresponding silicon-based ones, and enable
efficiency levels unattainable otherwise. FMS’s portfolio of SiC devices covers 650 V and 1200 V Schottky diodes.
Advantages of Silicon Carbide Over Silicon Devices
The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes)
to a range up to 100-150 V, with a relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a much higher
breakdown voltage. Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V)
applications. AS offers products up to 1200 V in discrete packages.
Features
›› No reverse recovery charge
›› Purely capacitive switching
›› High operating temperature (Tj, max =175°C)
Advantages
›› Low turn-off losses
›› Reduction of Mosfet or IGBT turn-on loss
›› Switching losses independent from load current, switching speed and temperature
Benefits
›› System efficiency improvement compared to Si diodes
›› Reduced cooling requirements
›› Enabling higher frequency/increased power density
›› Higher system reliability due to lower operating temperature
›› Reduced EMI
Applications
›› PC/Server/Telecom power
›› EV/HEV charging stations
›› OBC
›› Solar converters
›› UPS
›› Lighting
›› Motor drives
›› Energy storage