Breakthrough Technology Combines High Performance with Low Losses

Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers a number of attractive characteristics for

high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and

thermal conductivity of silicon carbide allow eveloping devices which by far outperform the corresponding silicon-based ones, and enable

efficiency levels unattainable otherwise. FMS’s portfolio of SiC devices covers 650 V and 1200 V Schottky diodes.

 

Advantages of Silicon Carbide Over Silicon Devices

The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes)

to a range up to 100-150 V, with a relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a much higher

breakdown voltage. Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V)

applications.  AS offers products up to 1200 V in discrete packages.

 

 

Benefits

›› System efficiency improvement compared to Si diodes

›› Reduced cooling requirements

›› Enabling higher frequency/increased power density

›› Higher system reliability due to lower operating temperature

›› Reduced EMI

 

Applications

›› PC/Server/Telecom power

›› EV/HEV charging stations

›› OBC

›› Solar converters

›› UPS

›› Lighting

›› Motor drives

›› Energy storage