Silicon Carbide (SiC) Material Features

As a third-generation wide-bandgap semiconductor material, SiC exhibits high breakdown electric field strength and excellent thermal stability and features such as current-carrier saturation、 high drift velocity and high thermal conductivity Which can be used to manufacture a variety of high frequency, high efficiency and high power devices. These application is a difficult occasion for traditional Si devices.

Physical Properties of Silicon Carbide (SiC) Material

Applications of SiC Products